CM100DU-12H MITSUBISHI

The CM100DU-12H Mitsubishi is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power control applications. This module features a dual N-channel transistor polarity, enabling efficient switching and amplification of electrical signals. With a collector-emitter voltage (VCES) of 600V, it can handle substantial voltage levels, ensuring reliable operation in high-voltage circuits. The module boasts a continuous DC collector current of 100A, making it suitable for applications requiring significant current handling capabilities. Its low collector-emitter saturation voltage of 2.4V minimizes power loss during conduction, enhancing overall system efficiency. The CM100DU-12H exhibits a power dissipation (PD) of 400W, allowing it to manage substantial heat generation. This IGBT module is commonly used in inverters, motor drives, and power supplies. The robust design and high performance characteristics of the CM100DU-12H make it a dependable choice for various industrial and commercial applications. Its compact size and ease of integration further contribute to its versatility.