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CM150DY-12NF MITSUBISHI ELECTRIC

SKU: CM150DY12NF
$1,774.44
IN STOCK
Express delivery
New - 12 Months warranty
Delivery: Ships within 3 business days
Worldwide delivery by DHL Express courier
Shipping: Calculated at Checkout
Weight: 0.30 KGS
Width: 7.50 (cm)
Height: 4.50 (cm)
Depth: 12.50 (cm)
HS Code / Commodity code: 8541.60
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Description  
The CM150DY-12NF from Mitsubishi Electric is a high-performance Insulated Gate Bipolar Transistor (IGBT) module configured in a dual (half-bridge) topology. This module is designed for demanding power switching applications, offering efficient and reliable operation. It features a collector current rating of 150A, making it suitable for medium to high power inverters and converters. The collector-emitter saturation voltage is typically 1.7V, contributing to reduced power losses during operation. With a power dissipation of 590W, the CM150DY-12NF can handle significant thermal loads. The maximum junction temperature is rated at 150°C, ensuring robust performance under elevated temperature conditions. This module is commonly used in motor drives, uninterruptible power supplies (UPS), and other industrial power control systems. Its half-bridge configuration allows for efficient control of AC power, making it a versatile component in power electronics designs. The module's robust design and high current capability make it a reliable choice for demanding applications.
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