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CM200DU-12NFH MITSUBISHI ELECTRIC

SKU: CM200DU12NFH
R29,169.06
IN STOCK
Express delivery
New - 12 Months warranty
Delivery: Ships within 3 business days
Worldwide delivery by DHL Express courier
Shipping: Calculated at Checkout
Weight: 0.30 KGS
Width: 5.00 (cm)
Height: 4.00 (cm)
Depth: 12.00 (cm)
HS Code / Commodity code: 8541.60.0000
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Description  
The CM200DU-12NFH from Mitsubishi Electric is a high-performance insulated gate bipolar transistor (IGBT) module configured in a dual half-bridge topology. This module is designed for demanding power switching applications, offering a collector current of 200A and a collector-emitter voltage of 600V. It features a maximum power dissipation of 590W, enabling efficient operation in high-frequency circuits. The CM200DU-12NFH is engineered to operate reliably at junction temperatures up to 150°C. Its robust design ensures stable performance in harsh industrial environments. This IGBT module is ideal for use in inverters, motor drives, and other power conversion systems. The module's compact size and integrated construction simplify assembly and reduce overall system size. Benefit from enhanced thermal management and improved switching characteristics with this advanced IGBT module.
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