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CM200DY-12NF MITSUBISHI ELECTRIC

SKU: CM200DY12NF
$1,736.28
IN STOCK
Express delivery
New - 12 Months warranty
Delivery: Ships within 3 business days
Worldwide delivery by DHL Express courier
Shipping: Calculated at Checkout
Weight: 0.30 KGS
Width: 5.00 (cm)
Height: 4.00 (cm)
Depth: 15.00 (cm)
HS Code / Commodity code: 85412900
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Description  
The CM200DY-12NF is a high-performance Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric. This module features a dual configuration, specifically a half-bridge topology, making it suitable for a wide range of power electronics applications. It boasts a current rating of 200 Amperes and a voltage rating of 600 Volts, enabling it to handle substantial power levels. With a power dissipation of 650 Watts, the CM200DY-12NF is designed for efficient thermal management. The IGBT technology ensures fast switching speeds and low conduction losses, contributing to overall system efficiency. This module is commonly used in applications such as motor drives, uninterruptible power supplies (UPS), and power inverters. Its robust design and high reliability make it a preferred choice for demanding industrial environments. The half-bridge configuration allows for easy implementation in various power conversion circuits. Furthermore, Mitsubishi Electric's reputation for quality ensures long-term performance and dependability.
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