CM600DU-12NFH MITSUBISHI ELECTRIC

The CM600DU-12NFH from Mitsubishi Electric is a high-performance insulated gate bipolar transistor (IGBT) module configured in a dual half-bridge topology. This module is designed for demanding power switching applications, offering a collector current of 600A and a collector-emitter voltage of 1200V (1.2kV). It features a maximum power dissipation of 2.35kW, enabling efficient operation in high-power circuits. The CM600DU-12NFH is engineered to operate at a maximum junction temperature of 150°C, ensuring reliability under strenuous conditions. This module is ideal for use in inverters, motor drives, and other power conversion systems. Its robust design and high current capabilities make it suitable for industrial applications requiring efficient and reliable power control. The half-bridge configuration allows for flexible circuit designs and efficient switching performance. The module package is designed for easy mounting and thermal management, facilitating integration into various systems. Mitsubishi Electric's advanced manufacturing processes ensure high quality and consistent performance of the CM600DU-12NFH.