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IXFA4N100P IXYS

SKU: IXFA4N100P
$190.80
IN STOCK
Express delivery
New - 12 Months warranty
Delivery: Ships within 3 business days
Worldwide delivery by DHL Express courier
Shipping: Calculated at Checkout
Weight: 0.00 KGS
Width: 9.20 (cm)
Height: 4.70 (cm)
Depth: 10.30 (cm)
HS Code / Commodity code: 8541.29.0000
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Description  
The IXFA4N100P from IXYS is a high-voltage N-Channel power MOSFET designed for demanding applications. It boasts a drain-source voltage (Vds) of 1000V, making it suitable for high-voltage switching circuits. This MOSFET can handle a continuous drain current (Id) of 4A when the case temperature is maintained at 25°C. The device is capable of dissipating up to 150W of power, also under the condition of a 25°C case temperature. It comes in a surface-mountable TO-263AA package, facilitating efficient heat dissipation and ease of assembly. The IXFA4N100P features a fast switching speed, minimizing switching losses in high-frequency applications. Its robust design ensures reliable operation in harsh environments. Typical applications include power supplies, motor control, and high-voltage inverters. This MOSFET offers a combination of high voltage, moderate current, and efficient thermal performance.
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