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CM100TX-24T MITSUBISHI ELECTRIC
The CM100TX-24T Mitsubishi Electric IGBT module is a high-performance component designed for demanding power control applications. This module features a three-phase bridge configuration, enabling...R52,847.48 -
CM100TX-34T MITSUBISHI ELECTRIC
The CM100TX-34T is a silicon N channel IGBT (insulated gate bipolar transistor) module manufactured by Mitsubishi Electric. It is designed for high-power switching applications. This module features...R65,201.44 -
CM100TXP-24T MITSUBISHI
The CM100TXP-24T Mitsubishi is an insulated gate bipolar transistor (IGBT) module designed for high-power switching applications. This module features a gate-emitter voltage range of -20 to 20 V,...R24,021.58 -
CM1200DC-34N MITSUBISHI
The CM1200DC-34N is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. This module is designed for use in a variety of high-voltage, high-current...R240,215.83 -
CM1200DC-34S MITSUBISHI
The CM1200DC-34S Mitsubishi is a high-voltage insulated gate bipolar transistor (HVIGBT) module designed for demanding power electronics applications. This module offers exceptional performance and...R200,065.47 -
CM1200HB-50H MITSUBISHI
The CM1200HB-50H from Mitsubishi is a high-voltage Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power control applications. This module features a voltage rating of 2500V,...R245,706.47 -
CM1200HC-66H-203 MITSUBISHI
The CM1200HC-66H is a Mitsubishi Electric insulated gate bipolar transistor (IGBT) module. It is designed for high-power switching applications. This module features a high collector-emitter voltage...R176,043.88 -
CM1400DU-24NF MITSUBISHI
The CM1400DU-24NF from Mitsubishi is a robust IGBT (Insulated Gate Bipolar Transistor) module engineered for high-power applications. This half-bridge configuration module is designed for chassis...R229,577.70 -
CM1400DUC-24S MITSUBISHI ELECTRIC
The CM1400DUC-24S from Mitsubishi Electric is a high-power insulated gate bipolar transistor (IGBT) module configured in a dual (half-bridge) topology. This module is designed for demanding...R136,579.86 -
CM1400HA-24S MITSUBISHI ELECTRIC
The CM1400HA-24S is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. This module is designed for high-voltage and high-current applications. It is...R59,367.63 -
CM150DU-24NFH MITSUBISHI ELECTRIC
The CM150DU-24NFH is a high-performance insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. This module features a dual configuration, specifically a half-bridge...R27,796.40 -
CM150DX-24S MITSUBISHI ELECTRIC
The CM150DX-24S is a silicon N channel IGBT power transistor module. It is manufactured by Mitsubishi Electric. This module is designed for high power switching applications. It features a...R34,659.71