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CM600DU-24NFH MITSUBISHI ELECTRIC
The CM600DU-24NFH is a high-performance insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. This module features a dual configuration, specifically a half-bridge...R72,064.75 -
CM600DX-24S1 MITSUBISHI ELECTRIC
The CM600DX-24S1 from Mitsubishi Electric is a high-performance Insulated Gate Bipolar Transistor (IGBT) module configured in a dual (half-bridge) topology. This module is designed for demanding...R63,828.78 -
CM600DX-24T MITSUBISHI ELECTRIC
The CM600DX-24T is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. It is designed for use in various high-voltage and high-current applications. This...R77,212.23 -
CM600DX-24T1 MITSUBISHI ELECTRIC
The CM600DX-24T1 is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. This module is designed for use in a variety of high-voltage, high-current...R63,828.78 -
CM600DX-34T MITSUBISHI ELECTRIC
The CM600DX-34T is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. This module is designed for use in a variety of high-voltage, high-current...R60,053.96 -
CM600DXL-24S MITSUBISHI ELECTRIC
The CM600DXL-24S from Mitsubishi Electric is a high-performance Insulated Gate Bipolar Transistor (IGBT) module configured in a dual (half-bridge) topology. This module is engineered for demanding...R62,456.12 -
CM600DXL-34SA MITSUBISHI ELECTRIC
The CM600DXL-34SA from Mitsubishi Electric is a high-performance Insulated Gate Bipolar Transistor (IGBT) module configured in a dual half-bridge topology. This module is designed for demanding power...R106,038.13 -
CM600DXP-13T MITSUBISHI ELECTRIC
The CM600DXP-13T is a Mitsubishi Electric insulated gate bipolar transistor (IGBT) module. It is designed for high-power switching applications. This module features a dual configuration,...R42,552.52 -
CM600DXP-24T MITSUBISHI ELECTRIC
The CM600DXP-24T is a Mitsubishi Electric insulated gate bipolar transistor (IGBT) module. It is designed for high-power switching applications. This module features a dual configuration, housing two...R60,053.96 -
CM600DY-12NF MITSUBISHI ELECTRIC
The CM600DY-12NF is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. This module features a dual configuration, also known as a half-bridge...R50,445.32 -
CM600DY-13T MITSUBISHI ELECTRIC
The CM600DY-13T is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. It is designed for use in a variety of high-voltage, high-current applications...R49,415.83 -
CM600DY-24A MITSUBISHI ELECTRIC
The CM600DY-24A from Mitsubishi Electric is a high-power insulated gate bipolar transistor (IGBT) module configured in a dual (half-bridge) configuration. This module is designed for demanding power...R43,925.18