The CM600DY-24S from Mitsubishi Electric is a high-power insulated gate bipolar transistor (IGBT) module configured in a dual half-bridge topology. This module is designed for demanding applications...

The CM600DY-24T is a Mitsubishi Electric insulated gate bipolar transistor (IGBT) module. It is designed for high-power switching applications. This module features a high breakdown voltage and low...

The CM600HA-12H Mitsubishi is a robust single-IGBT module designed for high-power switching applications. This module features a voltage rating of 600V and a current rating of 600A, making it...

The CM600HA-24A is a robust single-IGBT module manufactured by Mitsubishi Electric, designed for high-power switching applications. This module features a collector current rating of 600A and a...

The CM600HA-24H is a Mitsubishi Electric insulated gate bipolar transistor (IGBT) module. It is designed for high-power switching applications. This module features a high breakdown voltage and low...

The CM600HA-34S is a silicon N channel IGBT (insulated gate bipolar transistor) module manufactured by Mitsubishi Electric. This module is designed for high-power switching applications. It features...

The CM600HB-24A is a high-power N-channel Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric. This module is designed for high-voltage, high-current switching...

The CM600HG-130H is a Mitsubishi Electric insulated gate bipolar transistor (IGBT) module. It is designed for high-power switching applications. This module features a high breakdown voltage and low...

The CM600HU-24F Mitsubishi is a high-power insulated gate bipolar transistor (IGBT) module designed for demanding applications. This module features a high DC collector current of 600A, making it...

The CM600HU-24H from Mitsubishi Electric is an insulated gate bipolar transistor (IGBT) module designed for high-power switching applications. This N-channel IGBT features a collector-emitter...

The CM600HX-12A is a single-module Insulated Gate Bipolar Transistor (IGBT) from Mitsubishi Electric, designed for high-power switching applications. This robust module features a voltage rating of...

The CM75DY-24H Mitsubishi is an insulated gate bipolar transistor (IGBT) module designed for high-power switching applications. This module features a collector-emitter voltage of 1200V, making it...