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SKM200GB12T4 SEMIKRON

SKU: SKM200GB12T4
$1,736.28
IN STOCK
Express delivery
New - 12 Months warranty
Delivery: Ships within 3 business days
Worldwide delivery by DHL Express courier
Shipping: Calculated at Checkout
Weight: 0.30 KGS
Width: 6.00 (cm)
Height: 4.50 (cm)
Depth: 12.00 (cm)
HS Code / Commodity code: 8541.29.0000
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Description  
The SKM200GB12T4 from Semikron is an IGBT (Insulated Gate Bipolar Transistor) module configured as a half-bridge. This module is designed for high-power switching applications, offering efficient and reliable performance. It features a collector current rating of 313A, making it suitable for motor drives, inverters, and power supplies. The module has a low collector-emitter saturation voltage of 1.8V, which minimizes power losses and improves efficiency. Its maximum junction temperature is rated at 175°C, allowing for robust operation in demanding thermal environments. The half-bridge configuration consists of two IGBTs and two freewheeling diodes. This module is commonly used in applications requiring efficient power conversion and control. The SKM200GB12T4 is known for its durability and long lifespan. It is designed to provide reliable performance in industrial applications. The module's robust construction ensures it can withstand harsh operating conditions.
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