THYRISTORS, IGBT & MOSFET

The 942 GB120-317CTV Semikron is a high-performance insulated gate bipolar transistor (IGBT) module. It is designed for use in a variety of power electronic applications. These applications include motor drives, inverters, and power supplies. The module...

The CM100DU-12H Mitsubishi is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power control applications. This module features a dual N-channel transistor polarity, enabling efficient switching and amplification...

The CM100TXP-24T Mitsubishi is an insulated gate bipolar transistor (IGBT) module designed for high-power switching applications. This module features a gate-emitter voltage range of -20 to 20 V, ensuring reliable gate control and preventing gate...

The CM1200DC-34N is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. This module is designed for use in a variety of high-voltage, high-current applications. It features a collector-emitter voltage of...

The CM1200DC-34S Mitsubishi is a high-voltage insulated gate bipolar transistor (HVIGBT) module designed for demanding power electronics applications. This module offers exceptional performance and reliability due to its advanced chip technology and...

The CM1400DU-24NF from Mitsubishi is a robust IGBT (Insulated Gate Bipolar Transistor) module engineered for high-power applications. This half-bridge configuration module is designed for chassis mounting, ensuring secure and stable integration into...

The CM150RX1-24T is a Mitsubishi Electric insulated gate bipolar transistor (IGBT) module. It is designed for high-power switching applications. This module features a collector-emitter voltage of 1200V. The collector current is rated at 150A. It...

The CM2400HCB-34N is a Mitsubishi Electric Intelligent Power Module (IPM). It's designed for high-efficiency motor control applications. This IPM integrates multiple power semiconductor devices and a control IC into a single package. It simplifies...

The CM600HA-12H Mitsubishi is a robust single-IGBT module designed for high-power switching applications. This module features a voltage rating of 600V and a current rating of 600A, making it suitable for demanding industrial environments. With a power...

The CM600HB-24A is a high-power N-channel Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric. This module is designed for high-voltage, high-current switching applications. It features a collector-emitter voltage...

The CM800HB-50H Mitsubishi is a high-performance HVIGBT (High Voltage Insulated Gate Bipolar Transistor) module designed for demanding power control applications. This module features a maximum collector-emitter voltage of 2500V, enabling it to handle...

The CM900HG-130X from Mitsubishi is a high-voltage insulated gate bipolar transistor (HVIGBT) module designed for demanding power control applications. This module features a robust construction and advanced chip technology, ensuring reliable performance...