CM100TXP-24T MITSUBISHI

The CM100TXP-24T Mitsubishi is an insulated gate bipolar transistor (IGBT) module designed for high-power switching applications. This module features a gate-emitter voltage range of -20 to 20 V, ensuring reliable gate control and preventing gate overvoltage. The saturated collector-emitter voltage typically ranges from 1.55 to 1.95 V, indicating low on-state losses and efficient power conversion. With a continuous DC collector current rating of 100 A, this IGBT module can handle substantial current loads in demanding applications. Its maximum junction temperature is rated at 175 degrees Celsius, allowing for operation in high-temperature environments with adequate thermal management. The gate-emitter leakage current is minimal, typically around 0.5 uA, ensuring minimal gate drive power consumption. This IGBT module is suitable for applications such as motor drives, inverters, and power supplies. It offers a combination of high current handling capability, low on-state losses, and robust thermal performance. The CM100TXP-24T is designed to provide efficient and reliable switching performance in various power electronic systems.