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CM150DY-24NF MITSUBISHI ELECTRIC
SKU:
CM150DY24NF
$1,927.08
IN STOCK
Express delivery
New - 12 Months warranty
Delivery:
Ships within 3 business days
Worldwide delivery by DHL Express courier
Shipping:
Calculated at Checkout
Weight:
0.30 KGS
Width:
8.00
(cm)
Height:
4.50
(cm)
Depth:
15.00
(cm)
HS Code / Commodity code:
8541.60.0000
The CM150DY-24NF is a high-performance Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric. This module features a dual configuration, specifically a half-bridge topology, making it suitable for a variety of power control applications. It is designed to handle a continuous collector current of 150 Amperes and a collector-emitter voltage of 1.2 kV, providing robust performance in demanding environments. The module has a power dissipation of 780 Watts, enabling efficient operation and heat management. The CM150DY-24NF is capable of operating at a maximum junction temperature of 150°C, ensuring reliability under high thermal stress. Its module-type packaging facilitates easy mounting and integration into power electronic systems. This IGBT module is ideal for applications such as motor drives, inverters, and power supplies. The device's advanced design and construction ensure high efficiency, low switching losses, and excellent thermal characteristics. Mitsubishi Electric's commitment to quality and innovation makes the CM150DY-24NF a dependable choice for power control solutions.