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CM600DY-12NF MITSUBISHI ELECTRIC

SKU: CM600DY12NF
R50,445.32
IN STOCK
Express delivery
New - 12 Months warranty
Delivery: Ships within 3 business days
Worldwide delivery by DHL Express courier
Shipping: Calculated at Checkout
Weight: 0.60 KGS
Width: 8.00 (cm)
Height: 4.50 (cm)
Depth: 15.00 (cm)
HS Code / Commodity code: 8541.60.00
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Description  
The CM600DY-12NF is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. This module features a dual configuration, also known as a half-bridge configuration, making it suitable for a variety of power electronics applications. It is designed to handle a continuous collector current of 600 Amperes and a collector-emitter voltage of 600 Volts. The module has a power dissipation of 1.13 kW and a maximum operating junction temperature of 150 degrees Celsius. The CM600DY-12NF is commonly used in inverters, converters, and other power switching circuits. Its robust design ensures reliable performance in demanding industrial environments. The module's construction facilitates efficient heat dissipation, contributing to its overall reliability and longevity. This IGBT module is ideal for applications requiring high power and efficient switching capabilities.
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